A <i>Ka</i>-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers
نویسندگان
چکیده
A Ka-band monolithic low-noise amplifier (LNA) with high gain and dynamic range (DR) has been designed implemented in a 100-nm gallium nitride (GaN)-on-Si technology. The LNA is as the first stage of DR receiver an frequency modulated continuous wave (FMCW) radar for detection small drones. three-stage microwave integrated circuit (MMIC) linear 26 dB noise figure (NF) 2 band 33-38 GHz. output 1-dB compression point (P1dB) IP3 at 37 GHz are 20 28.4 dBm, respectively. To our knowledge, this combination NF, gain, performance represents state art band.
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ژورنال
عنوان ژورنال: IEEE Microwave and Wireless Components Letters
سال: 2021
ISSN: ['1531-1309', '1558-1764']
DOI: https://doi.org/10.1109/lmwc.2020.3047152